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Beilstein J. Nanotechnol. 2018, 9, 1926–1939, doi:10.3762/bjnano.9.184
Figure 1: Removed SiGe thickness measured by different methods (TEM, XRD and ellipsometry) as a function of t...
Figure 2: Removed SiGe thickness (measured by ellipsometry) as a function of etching time for two different G...
Figure 3: (a) Sheet resistance RS, (b) Hall dose NH, and (c) Hall mobility µH as functions of the etching tim...
Figure 4: Depth profiles of (a) active dopant concentration and (b) carrier mobility extracted from the DHE m...
Figure 5: Sheet resistance as a function of the laser energy density for 6 nm SiGeOI (xGe = 0.25) layer impla...
Figure 6: Hall effect measurements (raw data: (a) RS, (b) NH and (c) µH) of the SiGeOI sample (xGe = 0.25) im...
Figure 7: Depth profiles of (a) active dopant concentration and (b) carrier mobility extracted from DHE measu...
Figure 8: Concentration depth profiles of (a) arsenic and (b) oxygen measured by SIMS in 11 nm thick SOI wafe...
Figure 9: Hall effect measurements (raw data: (a) RS, (b) NH and (c) µH) of the SOI samples implanted with ar...
Figure 10: Active dopant concentration depth profiles as extracted by DHE measurements from 11 nm thick SOI wa...